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Transistors

Saturday, October 2, 2010. BJT was named because its operation involves conduction by two carriers electrons and holes in the same crystal. The first bipolar transistor was invented at Bell Labs by William Shockley, Walter Brattain, and John Bardeen so late in 1947 that it was not published until 1948. Thus, many texts differ as to the date of invention. Brattain fabricated a germanium point contact transistor. The bipolar junction transistor shown in Figure below. At the ends, and a base. A, a voltag.

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Transistors

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Saturday, October 2, 2010. BJT was named because its operation involves conduction by two carriers electrons and holes in the same crystal. The first bipolar transistor was invented at Bell Labs by William Shockley, Walter Brattain, and John Bardeen so late in 1947 that it was not published until 1948. Thus, many texts differ as to the date of invention. Brattain fabricated a germanium point contact transistor. The bipolar junction transistor shown in Figure below. At the ends, and a base. A, a voltag.

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This web page transistorcircuits.blogspot.com states the following, "Saturday, October 2, 2010." We saw that the webpage said " BJT was named because its operation involves conduction by two carriers electrons and holes in the same crystal." It also said " The first bipolar transistor was invented at Bell Labs by William Shockley, Walter Brattain, and John Bardeen so late in 1947 that it was not published until 1948. Thus, many texts differ as to the date of invention. Brattain fabricated a germanium point contact transistor. The bipolar junction transistor shown in Figure below. At the ends, and a base."

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