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Miércoles, 30 de septiembre de 2009. Transistor MOSFET de empobrecimiento canal N. Transistor MOSFET de empobrecimiento canal P. Son las siglas de Metal Oxide Semiconductor Field Effect Transistor. Consiste en un transistor de efecto de campo basado en la estructura MOS. Es el transistor más utilizado en la industria microelectrónica. Prácticamente la totalidad de los circuitos integrados de uso comercial están basados en transistores MOSFET. Un transistor MOSFET consiste en un sustrato de material semic.

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Miércoles, 30 de septiembre de 2009. Transistor MOSFET de empobrecimiento canal N. Transistor MOSFET de empobrecimiento canal P. Son las siglas de Metal Oxide Semiconductor Field Effect Transistor. Consiste en un transistor de efecto de campo basado en la estructura MOS. Es el transistor más utilizado en la industria microelectrónica. Prácticamente la totalidad de los circuitos integrados de uso comercial están basados en transistores MOSFET. Un transistor MOSFET consiste en un sustrato de material semic.

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This web page figoelcaeac.blogspot.com states the following, "Miércoles, 30 de septiembre de 2009." We saw that the webpage said " Transistor MOSFET de empobrecimiento canal N." It also said " Transistor MOSFET de empobrecimiento canal P. Son las siglas de Metal Oxide Semiconductor Field Effect Transistor. Consiste en un transistor de efecto de campo basado en la estructura MOS. Es el transistor más utilizado en la industria microelectrónica. Prácticamente la totalidad de los circuitos integrados de uso comercial están basados en transistores MOSFET. Un transistor MOSFET consiste en un sustrato de material semic."

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