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Plasma Technology for Advanced Devices
Plasma Technology for Advanced Devices. Monday, February 18, 2008. Etching of SiCO Effect of Pores. The following experiments investigate the role of pores in etching of porous SiCO low k materials. Slide 1. One possible explanation for this effect is that is the etch chemistry if sufficiently polymerizing and the etch process close to etch stop, the pores at the surface of the material offer additional adsorption places for the polymer precursors and that they can be filled with polymers. The etch chem.
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Plasma Technology for Advanced DevicesDESCRIPTION
Plasma Technology for Advanced Devices. Monday, February 18, 2008. Etching of SiCO Effect of Pores. The following experiments investigate the role of pores in etching of porous SiCO low k materials. Slide 1. One possible explanation for this effect is that is the etch chemistry if sufficiently polymerizing and the etch process close to etch stop, the pores at the surface of the material offer additional adsorption places for the polymer precursors and that they can be filled with polymers. The etch chem.CONTENT
This web page clarycon.blogspot.com states the following, "Monday, February 18, 2008." We saw that the webpage said " Etching of SiCO Effect of Pores." It also said " The following experiments investigate the role of pores in etching of porous SiCO low k materials. One possible explanation for this effect is that is the etch chemistry if sufficiently polymerizing and the etch process close to etch stop, the pores at the surface of the material offer additional adsorption places for the polymer precursors and that they can be filled with polymers."SEEK SIMILAR DOMAINS
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