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The IGCT Integrated GCT is the combination of the GCT device and a low inductance gate unit. This technology extends transistor switching performance to well above the MW range, with 4.5kV devices capable of turning off 4kA, and 6kV devices capable of turning off 3kA without snubbers. The IGCT represents the optimum combination of low loss thyristor technology and snubberles gate effective turn off for demanding medium and high voltage power electronics applications. Subscribe to Posts Atom.

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The IGCT Integrated GCT is the combination of the GCT device and a low inductance gate unit. This technology extends transistor switching performance to well above the MW range, with 4.5kV devices capable of turning off 4kA, and 6kV devices capable of turning off 3kA without snubbers. The IGCT represents the optimum combination of low loss thyristor technology and snubberles gate effective turn off for demanding medium and high voltage power electronics applications. Subscribe to Posts Atom.

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This web page 19ec.blogspot.com states the following, "The IGCT Integrated GCT is the combination of the GCT device and a low inductance gate unit." We saw that the webpage said " This technology extends transistor switching performance to well above the MW range, with 4." It also said "5kV devices capable of turning off 4kA, and 6kV devices capable of turning off 3kA without snubbers. The IGCT represents the optimum combination of low loss thyristor technology and snubberles gate effective turn off for demanding medium and high voltage power electronics applications."

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